MRF7S27130HR3 MRF7S27130HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1500 mA, Pout
=23WAvg.,
3/4,4Bursts,PAR=9.5dB@
f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single--Carrier, 7 MHz Channel Bandwidth, 64 QAM
0.01% Probability on CCDF.
Mask System Type G @ Pout
=23WAvg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
?
?
?
?
?
-- 2 7
-- 4 0
-- 4 4
-- 6 0
-- 6 0
?
?
?
?
?
dBc
Relative Constellation Error @ Pout
=23WAvg.
(1)
RCE
?
-- 3 3
?
dB
Error Vector Magnitude
(1)
(Typical EVM Performance @ Pout
= 23 W Avg. with OFDM 802.16d
Signal Call)
EVM
?
2.2
?
%rms
Typical Performances
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1500 mA, 2500--2700 MHz Bandwidth
Video Bandwidth @ 105 W PEP Pout
whereIM3=--30dBc
(Tone Spacing from 100 kHz to VBW)
?IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
?
40
?
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout
=23WAvg.
GF
?
1.2
?
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@Pout
= 105 W CW
Φ
?
135
?
°
Average Group Delay @ Pout
= 105 W CW, f = 2600 MHz
Delay
?
1.5
?
ns
Part--to--Part Insertion Phase Variation @ Pout
= 105 W CW,
f = 2600 MHz, Six Sigma Window
?Φ
?
81.3
?
°
Gain Variation over Temperature
(--30°Cto+85°C)
?G
?
0.013
?
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
?P1dB
?
0.01
?
dB/°C
1. RCE = 20Log(EVM/100)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF7S35015HSR5
MOSFET RF N-CH 15W NI-400S-240
MRF7S35120HSR5
MOSFET RF N-CH 120W NI-780S
MRF7S38010HSR5
MOSFET RF N-CH 2W 30V NI-400S
MRF7S38040HSR5
MOSFET RF N-CH 8W 30V NI-400S
MRF7S38075HSR5
MOSFET RF N-CH 12W 30V NI-780S
MRF8P18265HSR6
FET RF N-CH 1840MHZ 30V NI1230S8
MRF8P20100HSR3
FET RF N-CH 2025MHZ 28V NI780H-4
MRF8P20140WHSR3
FET RF LDMOS 28V 500MA NI780S-4
相关代理商/技术参数
MRF7S35015HSR3
功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35015HSR3_11
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF7S35015HSR5
功能描述:射频MOSFET电源晶体管 HV7 PULSED 15W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35120HSR3
功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S35120HSR5
功能描述:射频MOSFET电源晶体管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S38010H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF7S38010HR3
功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S38010HR5
功能描述:射频MOSFET电源晶体管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray